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| bas29 bas29, rev. a bas29 small signal diode * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. ? 2002 fairchild semiconductor corporation 3 1 2 sot-23 1 2 3 l20 absolute maximum ratings* t a = 25c unless otherwise noted symbol parameter value units v rrm maximum repetitive reverse voltage 120 v i f(av) average rectified forward current 200 ma i fsm non-repetitive peak forward surge current pulse width = 1.0 second pulse width = 1.0 microsecond 1.0 2.0 a a t stg storage temperature range -55 to +150 c t j operating junction temperature 150 c thermal characteristics electrical characteristics t a = 25c unless otherwise noted symbol parameter value units p d power dissipation 350 mw r ja thermal resistance, junction to ambient 357 c/w symbol parameter test conditions min max units v r breakdown voltage i r = 1.0 ma 120 v v f * forward voltage i f = 10 ma i f = 50 ma i f = 100 ma i f = 200 ma i f = 400 ma 0.75 0.84 0.90 1.00 1.25 v v v v v i r * reverse current v r = 90 v v r = 90 v, t a = 150 c 100 100 na a c t total capacitance v r = 0, f = 1.0 mhz 2.0 pf t rr reverse recovery time i f = i r = 30 ma, i rr = 3.0 ma, r l = 100 ? 50 ns * pulse test : pulse width=300us, duty cycle=2% connection diagram 3 1 2nc
!"#$ %"& '(% & % )'"% &' ! %*$%('( (! '&$$% "'+ '% ,'*- %& ''.$ '- '( $$ %+ !% !"'* %("& % % $% %( / 0 ! 11 2 2 34 5 1 23 45 11 3 45 1 1 1 2 1 3 21 6 2 7 1 21 11 2 1 21 11 23 2 $ 2 ( ( % 1 1 1 1 2 2 1 2 3 11 2 1 2 1 1 2 1 1 1 2 1 2 " $ $ ( $ ! " ! #$ ! $ % $& ' ( ) !! *! * + ,$ " ! % - $ " ./ " .0 " .1 2 2 , " $! $ 8$%-' 3% 3 $ 45 |
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